Electron-hole bilayer TFET: Experiments and Comments

Alberto Revelant, Anthony Villalon, Yan Wu, Alexander Zaslavsky, Cyrille Le Royer, Hiroshi Iwai, Sorin Cristoloveanu*

*此作品的通信作者

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

We investigate Si/0.85Ge0.15 fully depleted-SOI tunnel FET (TFET) devices operated in the electron-hole bilayer (EHB) mode. The application of negative bias on front gate and positive bias on back gate results in confined hole and electron layers that are expected to enable vertical band-to-band tunneling (BTBT). The idea of the EHB-TFET device is to enhance the tunneling current by expanding the BTBT generation area from the narrow lateral source/channel junction to the entire channel region. Our systematic measurements on a variety of TFETs with variable geometry and channel materials do not offer support to this attractive concept. Self-consistent simulations confirm that the vertical BTBT transitions do not produce an appreciable current in our devices, due to size-and bias-induced quantization, effective mass anisotropy, and incomplete formation of the bilayer. We examine the conditions for efficient vertical BTBT to occur and show that they cannot be met simultaneously, at least in Si or Si/SiGe devices.

原文English
文章編號6855339
頁(從 - 到)2674-2681
頁數8
期刊IEEE Transactions on Electron Devices
61
發行號8
DOIs
出版狀態Published - 八月 2014

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