Electron emission properties of GaAsN/GaAs quantum well containing N-Related localized states: The influence of illuminance

Meng Chien Hsieh*, Jia Feng Wang, Yu Shou Wang, Cheng Hong Yang, Chen Hao Chiang, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

摘要

This study elucidates the electron emission properties of GaAsN/GaAs quantum well containing N-related localized states under illumination. The N-related localized states in a GaAsN quantum well (QW) are identified as both optical and electrical electron trap states. The mechanisms for the responses of current-voltage (I-V) measurement under illumination and photocapacitance are investigated. N-related localized states in GaAsN QW can extend response range and response sensitivity on photocapacitance, and produce an additional current path for photo-generated electron-hole pairs. Furthermore, exactly how illumination influences the electron emission rate of GaAsN QW electron state is examined. The electron emission rate of GaAsN QW electron state can be modulated by different incident photon energy, which is due to the modulation of depletion width of the bottom GaAs.

原文English
文章編號02BJ12
期刊Japanese journal of applied physics
51
發行號2 PART 2
DOIs
出版狀態Published - 1 二月 2012

指紋

深入研究「Electron emission properties of GaAsN/GaAs quantum well containing N-Related localized states: The influence of illuminance」主題。共同形成了獨特的指紋。

引用此