Spherical and well-separated tungsten nanocrystals embedded in the SiO 2 layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten suicide, with a mean size and aerial density of 4.5 nm and 3.7 × 1011/cm2, respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 10 6 write/erase cycles.
|頁（從 - 到）||G71-G73|
|期刊||Electrochemical and Solid-State Letters|
|出版狀態||Published - 7 4月 2005|