Electron and hole effective g factors in InAs/GaSb quantum wells

We investigate the Landau level structures and the electron and hole effective g factors in InAs/GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb at zero magnetic field B. Thus the electron and hole levels anticross with the increasing magnetic field and the strong dependence of the Landau level structures as well as g factors on B is obtained. We have found that the voltage across the structure and the lattice-mismatched strain also produce the essential changes in the Landau level structures as well as the electron and hole g factors.