@inproceedings{e351a3e609d94962b2df5cf6782fa89b,
title = "Electromigration improvement by graphene on Cu wire for next generation VLSI",
abstract = "The electromigration (EM) failure mode of copper (Cu) interconnects poses a major reliability concern. It has been found that using graphene as a capping layer on Cu could improve the EM failure. However, no reliability data have been reported for graphene grown on Cu damascene structures with foundry{\textquoteright}s back-end compatible process. In this study, we show that graphene can be selectively grown on Cu damascene structures as the capping layer on 12″ wafers. An improvement in the EM lifetime was achieved through the graphene capping layer on the Cu line, and a nanotwin Cu structure with a graphene capping layer was also compared.",
keywords = "Damascene, Electromigration, Graphene capping layer, Nanotwinned Cu",
author = "Hung, {Y. T.} and Huang, {J. Z.} and Chang, {H. H.} and Huang, {K. P.} and Lee, {O. H.} and Chiu, {W. L.} and Jian, {H. J.} and Huang, {K. C.} and Lo, {W. C.} and Hu, {J. S.} and Wu, {C. I.}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 20th International Conference on Electronics Packaging, ICEP 2021 ; Conference date: 12-05-2021 Through 14-05-2021",
year = "2021",
month = may,
day = "12",
doi = "10.23919/ICEP51988.2021.9451979",
language = "English",
series = "2021 International Conference on Electronics Packaging, ICEP 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "103--104",
booktitle = "2021 International Conference on Electronics Packaging, ICEP 2021",
address = "美國",
}