Electroless plating with Pd induced crystallization of amorphous silicon thin films

Guo Ren Hu; Yew-Chuhg Wu; Chi Wei Chao; Tian Jiun Huang

doi:10.1143/JJAP.41.6356

Electroless plating with Pd induced crystallization of amorphous silicon thin films

Guo Ren Hu, Yew-Chuhg Wu^*, Chi Wei Chao, Tian Jiun Huang

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

原文	English
頁（從 - 到）	6356-6357
頁數	2
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	41
發行號	11R
DOIs	https://doi.org/10.1143/JJAP.41.6356
出版狀態	Published - 11月 2002

存取文件

10.1143/JJAP.41.6356

其它文件與鏈接

Link to publication in Scopus

引用此

@article{acad0c52cbb24937a282beeab165a3bb,

title = "Electroless plating with Pd induced crystallization of amorphous silicon thin films",

abstract = "A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.",

keywords = "Amorphous silicon, Electroless plating, Metal-induced-crystallization, Polycrystalline silicon, Thin film transistor",

author = "Hu, {Guo Ren} and Yew-Chuhg Wu and Chao, {Chi Wei} and Huang, {Tian Jiun}",

year = "2002",

month = nov,

doi = "10.1143/JJAP.41.6356",

language = "English",

volume = "41",

pages = "6356--6357",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11R",

}

TY - JOUR

T1 - Electroless plating with Pd induced crystallization of amorphous silicon thin films

AU - Hu, Guo Ren

AU - Wu, Yew-Chuhg

AU - Chao, Chi Wei

AU - Huang, Tian Jiun

PY - 2002/11

Y1 - 2002/11

N2 - A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

AB - A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

KW - Amorphous silicon

KW - Electroless plating

KW - Metal-induced-crystallization

KW - Polycrystalline silicon

KW - Thin film transistor

UR - http://www.scopus.com/inward/record.url?scp=0036871835&partnerID=8YFLogxK

U2 - 10.1143/JJAP.41.6356

DO - 10.1143/JJAP.41.6356

M3 - Article

AN - SCOPUS:0036871835

VL - 41

SP - 6356

EP - 6357

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 11R

ER -

Electroless plating with Pd induced crystallization of amorphous silicon thin films

摘要

存取文件

其它文件與鏈接

指紋

引用此