Electroless plating with Pd induced crystallization of amorphous silicon thin films

Guo Ren Hu, Yew-Chuhg Wu*, Chi Wei Chao, Tian Jiun Huang

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

原文English
頁(從 - 到)6356-6357
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
發行號11R
DOIs
出版狀態Published - 11月 2002

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