Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films

C. W. Chao, G. R. Hu, Yew-Chuhg Wu*, Y. C. Chen, M. S. Feng

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Electrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall of the amorphous-silicon islands. After samples were annealed at 530°C, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of ∼55° from the edge. The direction of the primary grain growth was along <211> and the secondary growth occurred along <011> direction.

原文English
頁(從 - 到)C31-C32
頁數2
期刊Electrochemical and Solid-State Letters
5
發行號2
DOIs
出版狀態Published - 1 2月 2002

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