Electro-optic beam scanner in KTiOPO4

Yi Chiu; D. D. Stancil; T. E. Schlesinger; W. P. Risk

doi:10.1063/1.116806

Electro-optic beam scanner in KTiOPO₄

Yi Chiu^*, D. D. Stancil, T. E. Schlesinger, W. P. Risk

^*此作品的通信作者

電機工程學系

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO₄ using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO₃. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.

原文	English
頁（從 - 到）	3134-3136
頁數	3
期刊	Applied Physics Letters
卷	69
發行號	21
DOIs	https://doi.org/10.1063/1.116806
出版狀態	Published - 18 11月 1996

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abstract = "We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.",

author = "Yi Chiu and Stancil, {D. D.} and Schlesinger, {T. E.} and Risk, {W. P.}",

year = "1996",

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AU - Chiu, Yi

AU - Stancil, D. D.

AU - Schlesinger, T. E.

AU - Risk, W. P.

PY - 1996/11/18

Y1 - 1996/11/18

N2 - We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.

AB - We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.

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JF - Applied Physics Letters

IS - 21

ER -

Electro-optic beam scanner in KTiOPO4

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Electro-optic beam scanner in KTiOPO₄