摘要
The challenges involved in the realization of microcavity light emitters using photonic bandgap (PBG) crystals with electrical injection were described. Metal-organic vapor phase epitaxy (MOVPE) was used for the growth of the device heterostructure on GaAs substrate. The measured far-field radiation patterns showed considerable linewidth narrowing in the case of missing PBG formation and confirmed that the lasing originates from the defect mode.
原文 | English |
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頁(從 - 到) | 76-77 |
頁數 | 2 |
期刊 | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
卷 | 1 |
DOIs | |
出版狀態 | Published - 2001 |
事件 | 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, 美國 持續時間: 11 11月 2001 → 15 11月 2001 |