@inproceedings{326433fd239941da8e0df9daa6698693,
title = "Electrical transport in transparent conducting tin-doped indium oxide films",
abstract = "We have studied the temperature behavior of the electrical resistivities ρ(T) in a series of tin-doped indium-oxide films with different residual resistivities ρ0 varying from 218 to 568 μ cm. We found that the temperature dependence of ρ can be well described by the Bloch-Gr{\"u}neisen law from 300 K down to about 100 K. In particular, we observed that the strength of the electron-phonon coupling, βBG (which characterizes a prefactor in the Bloch-Gr{\"u}neisen formula) increases linearly with increasing ρ0. This result is not understood in terms of current theoretical concept for electron-phonon interaction in metals.",
keywords = "Bloch-Gruneisen law, Disorder, Electrical transport",
author = "Yeh, {S. S.} and Lu, {J. Y.} and Shiu, {M. W.} and Lin, {J. J.}",
year = "2006",
month = aug,
day = "10",
doi = "10.1063/1.2355295",
language = "English",
isbn = "0735403473",
series = "AIP Conference Proceedings",
pages = "1548--1549",
booktitle = "LOW TEMPERATURE PHYSICS",
note = "null ; Conference date: 10-08-2006 Through 17-10-2006",
}