Electrical transport in transparent conducting tin-doped indium oxide films

S. S. Yeh*, J. Y. Lu, M. W. Shiu, J. J. Lin

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We have studied the temperature behavior of the electrical resistivities ρ(T) in a series of tin-doped indium-oxide films with different residual resistivities ρ0 varying from 218 to 568 μ cm. We found that the temperature dependence of ρ can be well described by the Bloch-Grüneisen law from 300 K down to about 100 K. In particular, we observed that the strength of the electron-phonon coupling, βBG (which characterizes a prefactor in the Bloch-Grüneisen formula) increases linearly with increasing ρ0. This result is not understood in terms of current theoretical concept for electron-phonon interaction in metals.

原文English
主出版物標題LOW TEMPERATURE PHYSICS
主出版物子標題24th International Conference on Low Temperature Physics - LT24
頁面1548-1549
頁數2
DOIs
出版狀態Published - 10 八月 2006
事件LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
持續時間: 10 八月 200617 十月 2006

出版系列

名字AIP Conference Proceedings
850
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Conference

ConferenceLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
國家/地區United States
城市Orlando, FL
期間10/08/0617/10/06

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