Electrical Transport and Thermoelectric Properties of Cr-doped Monolayer MoS2and WS2via Density Functional Theory and Boltzmann Transport Simulation

Chieh Yang Chen, Yi-Ming Li*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This work computationally studies the monolayer (ML) MoS2, WS2 and the substitutional Cr-doped ones. The lattice parameters, band structure, density of state are calculated from the density functional theory (DFT). The electron mobility and Seebeck coefficient are estimated from the linearized Boltzmann transport equation (BTE). Compared with ML-MoS2 and ML-WS2, the direct band gaps of Cr-doped ML-MoS2 and ML-WS2 are reduced via DFT calculation. For the Cr-doped ML-MoS2 and ML-WS2, estimated by the linearized BTE, the values of electron mobility are about 5.7 and 11.8 times variations when the doping concentration increase from 108 to 1012 cm-2 at room temperature. The magnitudes of electron Seebeck coefficient of Cr-doped ML-MoS2 and ML-WS2 are about 1220 and 1210 μV/K at the doping concentration of 108 cm-2.

原文English
主出版物標題SISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面146-149
頁數4
ISBN(電子)9781665406857
DOIs
出版狀態Published - 27 9月 2021
事件26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021 - Dallas, United States
持續時間: 27 9月 202129 9月 2021

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2021-September

Conference

Conference26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021
國家/地區United States
城市Dallas
期間27/09/2129/09/21

指紋

深入研究「Electrical Transport and Thermoelectric Properties of Cr-doped Monolayer MoS2and WS2via Density Functional Theory and Boltzmann Transport Simulation」主題。共同形成了獨特的指紋。

引用此