TY - GEN
T1 - Electrical Transport and Thermoelectric Properties of Cr-doped Monolayer MoS2and WS2via Density Functional Theory and Boltzmann Transport Simulation
AU - Chen, Chieh Yang
AU - Li, Yi-Ming
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/27
Y1 - 2021/9/27
N2 - This work computationally studies the monolayer (ML) MoS2, WS2 and the substitutional Cr-doped ones. The lattice parameters, band structure, density of state are calculated from the density functional theory (DFT). The electron mobility and Seebeck coefficient are estimated from the linearized Boltzmann transport equation (BTE). Compared with ML-MoS2 and ML-WS2, the direct band gaps of Cr-doped ML-MoS2 and ML-WS2 are reduced via DFT calculation. For the Cr-doped ML-MoS2 and ML-WS2, estimated by the linearized BTE, the values of electron mobility are about 5.7 and 11.8 times variations when the doping concentration increase from 108 to 1012 cm-2 at room temperature. The magnitudes of electron Seebeck coefficient of Cr-doped ML-MoS2 and ML-WS2 are about 1220 and 1210 μV/K at the doping concentration of 108 cm-2.
AB - This work computationally studies the monolayer (ML) MoS2, WS2 and the substitutional Cr-doped ones. The lattice parameters, band structure, density of state are calculated from the density functional theory (DFT). The electron mobility and Seebeck coefficient are estimated from the linearized Boltzmann transport equation (BTE). Compared with ML-MoS2 and ML-WS2, the direct band gaps of Cr-doped ML-MoS2 and ML-WS2 are reduced via DFT calculation. For the Cr-doped ML-MoS2 and ML-WS2, estimated by the linearized BTE, the values of electron mobility are about 5.7 and 11.8 times variations when the doping concentration increase from 108 to 1012 cm-2 at room temperature. The magnitudes of electron Seebeck coefficient of Cr-doped ML-MoS2 and ML-WS2 are about 1220 and 1210 μV/K at the doping concentration of 108 cm-2.
KW - Boltzmann transport equation
KW - Mobility
KW - Molybdenum disulfide
KW - Substitutional doping
KW - Thermoelectric.
KW - Transition metal doping
KW - Tungsten disulfide
UR - http://www.scopus.com/inward/record.url?scp=85119433111&partnerID=8YFLogxK
U2 - 10.1109/SISPAD54002.2021.9592601
DO - 10.1109/SISPAD54002.2021.9592601
M3 - Conference contribution
AN - SCOPUS:85119433111
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 146
EP - 149
BT - SISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021
Y2 - 27 September 2021 through 29 September 2021
ER -