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Electrical properties of undoped and snte-doped ga
x
in
1
-
x
sb molecular-beam-epitaxially grown on gaas
Jenn-Fang Chen
, Shuenn Haw Jaw, Alfred Y. Cho
電子物理學系
研究成果
:
Article
›
同行評審
2
引文 斯高帕斯(Scopus)
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x
in
1
-
x
sb molecular-beam-epitaxially grown on gaas」主題。共同形成了獨特的指紋。
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Keyphrases
Gallium Arsenide
100%
Electrical Properties
100%
Molecular Beam
100%
Undoped
100%
Epitaxially Grown
100%
SnTe
100%
GaSb
28%
Impurity Concentration
28%
Donor Concentration
28%
Ionized Impurity
28%
Molecular Beam Epitaxy
14%
No Significant Difference
14%
Equivalent Pressure
14%
V(III)
14%
Incorporation Efficiency
14%
Pressure Ratio
14%
Mobility Values
14%
N-type Dopant
14%
Material Inhomogeneity
14%
Charged Impurity
14%
Material Imperfection
14%
Ternary Layer
14%
Engineering
Dopants
100%
Gallium Arsenide
100%
Pressure Ratio
100%
Incorporation Efficiency
100%
Phase Composition
100%
Material Science
Doping (Additives)
100%
Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
Phase Composition
100%
Physics
Molecular Beam
100%
Electrical Property
100%
Molecular Beam Epitaxy
50%