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Electrical properties of the free-standing diamond film at high voltages
Bohr Ran Huang
*
, Wen Cheng Ke,
Wei-Kuo Chen
*
此作品的通信作者
電子物理學系
研究成果
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Article
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同行評審
1
引文 斯高帕斯（Scopus）
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深入研究「Electrical properties of the free-standing diamond film at high voltages」主題。共同形成了獨特的指紋。
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Keyphrases
Electrical Properties
100%
Free-standing Diamond Film
100%
Silicon Substrate
33%
Contact Geometry
33%
Depositional System
16%
P-type
16%
Amorphous Carbon
16%
Diamond
16%
Microwave Plasma Chemical Vapor Deposition (MPCVD)
16%
(100) Silicon
16%
Breakdown Field
16%
I-V Characteristics
16%
Coplanar
16%
Conduction Mechanism
16%
Current-voltage (I-V) Characteristics
16%
Poole-Frenkel
16%
Low Breakdown Voltage
16%
KOH Solution
16%
Polycrystalline Diamond Films
16%
Asymmetrical Current
16%
Center Density
16%
Engineering
Diamond
100%
Silicon Substrate
28%
Current-Voltage Characteristic
28%
Deposition System
14%
Chemical Vapor Deposition
14%
Vapor Deposition
14%
Simulated Result
14%
Breakdown Voltage
14%
Microwave Plasma
14%
Polycrystalline Diamond
14%
Amorphous Carbon
14%
Breakdown Field
14%
Bottom Surface
14%
Physics
Diamond Films
100%
Electrical Property
100%
Vapor Deposition
14%
Polycrystalline
14%
Blood Plasma
14%
Material Science
Diamond Films
100%
Silicon
28%
Current-Voltage Characteristic
28%
Density
14%
Chemical Vapor Deposition
14%
Amorphous Carbon
14%
Diamond
14%
Surface (Surface Science)
14%
Earth and Planetary Sciences
Diamond Films
100%
Electrical Property
100%
Vapor Deposition
14%