Electrical properties of TaN-Cu nanocomposite thin films

C. M. Wang*, J. H. Hsieh, Y. Q. Fu, C. Li, T. P. Chen, U. T. Lam

*此作品的通信作者

研究成果: Conference article同行評審

27 引文 斯高帕斯(Scopus)

摘要

TaN-Cu nanocomposite thin films used as materials for TFR (thin film resistor) were prepared by reactive co-sputtering of Ta and Cu in the plasma of N2 and Ar. After deposition, the films were annealed using rapid thermal processing (RTP) at 400°C for 2, 4, 8min, respectively to induce the nucleation and grain growth of Cu. The results reveal that temperature coefficient of resistivity (TCR) values will increase with the increase of Cu content for both the as-deposited and annealed films. The increase of nitrogen will result in higher resistivity and more negative TCR. At a constant nitrogen flow rate, the resistivity and TCR may increase or decrease with the increase of annealing time depending on the Cu content. In general, to reach near-zero TCR value, more copper is needed to compensate the negative effect caused by Ta-N. Thus, electrical properties of thin films can be characterized as functions of N2 flow rate, Cu concentration and annealing time.

原文English
頁(從 - 到)1879-1883
頁數5
期刊Ceramics International
30
發行號7
DOIs
出版狀態Published - 2004
事件3rd Asian Meeting on Electroceramics - Singapore, Singapore
持續時間: 7 12月 200311 12月 2003

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