Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films

M. S. Tsai; S. C. Sun; Tseung-Yuen Tseng

doi:10.1080/10584589808202061

Electrical properties of O₂ and N₂ annealed (Ba,Sr)TiO₃ thin films

M. S. Tsai^*, S. C. Sun, Tseung-Yuen Tseng

^*此作品的通信作者

國立陽明交通大學

研究成果: Conference article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The dielectric constant and the leakage current of (Ba,Sr)TiO₃ (BST) thin films deposited on Pt bottom electrodes before and after annealing in O₂ and N₂ ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O₂-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N₂ ambient.

原文	English
頁（從 - 到）	173-183
頁數	11
期刊	Integrated Ferroelectrics
卷	21
發行號	1 -4 pt 1
DOIs	https://doi.org/10.1080/10584589808202061
出版狀態	Published - 1 12月 1998
事件	Proceedings of the 1998 10th International Symposium on Integrated Ferroelectronics. Part 1 (of 2) - Monterey, CA, USA 持續時間: 1 3月 1998 → 4 3月 1998

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title = "Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films",

abstract = "The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.",

author = "Tsai, {M. S.} and Sun, {S. C.} and Tseung-Yuen Tseng",

year = "1998",

month = dec,

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doi = "10.1080/10584589808202061",

language = "English",

volume = "21",

pages = "173--183",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

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number = "1 -4 pt 1",

note = "null ; Conference date: 01-03-1998 Through 04-03-1998",

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TY - JOUR

T1 - Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films

AU - Tsai, M. S.

AU - Sun, S. C.

AU - Tseng, Tseung-Yuen

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.

AB - The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.

UR - http://www.scopus.com/inward/record.url?scp=0032312459&partnerID=8YFLogxK

U2 - 10.1080/10584589808202061

DO - 10.1080/10584589808202061

M3 - Conference article

AN - SCOPUS:0032312459

VL - 21

SP - 173

EP - 183

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

IS - 1 -4 pt 1

Y2 - 1 March 1998 through 4 March 1998

ER -

Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films

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Electrical properties of O₂ and N₂ annealed (Ba,Sr)TiO₃ thin films