The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.
|頁（從 - 到）||173-183|
|發行號||1 -4 pt 1|
|出版狀態||Published - 1 12月 1998|
|事件||Proceedings of the 1998 10th International Symposium on Integrated Ferroelectronics. Part 1 (of 2) - Monterey, CA, USA|
持續時間: 1 3月 1998 → 4 3月 1998