Electrical properties of O2 and N2 annealed (Ba,Sr)TiO3 thin films

M. S. Tsai*, S. C. Sun, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Conference article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O2 and N2 ambients were investigated. The crystallinity was improved after post-deposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N2 ambient.

原文English
頁(從 - 到)173-183
頁數11
期刊Integrated Ferroelectrics
21
發行號1 -4 pt 1
DOIs
出版狀態Published - 1 12月 1998
事件Proceedings of the 1998 10th International Symposium on Integrated Ferroelectronics. Part 1 (of 2) - Monterey, CA, USA
持續時間: 1 3月 19984 3月 1998

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