Electrical properties of metal-silicon nitride-hydrogenated amorphous silicon capacitor elucidated using admittance spectroscopy

Keyphrases

• A-Si 100%
• Activation Energy 33%
• Admittance Spectroscopy 100%
• Capacitance Model 33%
• Direct Measurement Method 33%
• Electrical Properties 100%
• Equivalent Circuit Model 100%
• Fabrication Parameters 33%
• Full Depletion 33%
• Hydrogenated Amorphous Silicon 100%
• Interface State Density 33%
• Operating Conditions 33%
• Room Temperature 33%
• Silicon Capacitor 100%
• Silicon Nitride 100%
• Silicon Structure 33%
• Simplified Equivalent Circuit 33%
• SiNx 33%
• Thin-film Transistors 66%

Material Science

• Activation Energy 33%
• Amorphous Silicon 100%
• Capacitance 33%
• Capacitor 100%
• Density 33%
• Electronic Circuit 100%
• Silicon Nitride 100%
• Thin-Film Transistor 66%