Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition

Kai-Feng Huang*, J. S. Shie, J. J. Luo, J. S. Chen

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

Thin SiO2 films were prepared by photochemical vapour deposition. IR absorption and Auger electron spectroscopy showed that the dominant components of the oxide are silicon and oxygen with a small amount of hydrogen. Metal/insulator/semiconductor (MIS) capacitors were constructed on InSb substrates. Capacitance-voltage characteristics of the MIS capacitors were measured, and a midgap interface state density of the order of 1012 cm-2 eV-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, the midgap interface state density was reduced to 5 × 1011 cm-2 eV-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

原文English
頁(從 - 到)145-152
頁數8
期刊Thin Solid Films
151
發行號2
DOIs
出版狀態Published - 3 八月 1987

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