Electrical performance enhancement of Al-Zn-Sn-O thin film transistor by supercritical fluid treatment

Li Feng Teng; Po-Tsun Liu; Wei Ya Wang

doi:10.1109/LED.2013.2272117

Electrical performance enhancement of Al-Zn-Sn-O thin film transistor by supercritical fluid treatment

Li Feng Teng, Po-Tsun Liu, Wei Ya Wang

光電工程學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics.

原文	English
文章編號	6574227
頁（從 - 到）	1154-1156
頁數	3
期刊	IEEE Electron Device Letters
卷	34
發行號	9
DOIs	https://doi.org/10.1109/LED.2013.2272117
出版狀態	Published - 9月 2013

存取文件

10.1109/LED.2013.2272117

其它文件與鏈接

Link to publication in Scopus

引用此

@article{238aca1493514dde8c6f781687edc174,

title = "Electrical performance enhancement of Al-Zn-Sn-O thin film transistor by supercritical fluid treatment",

abstract = "In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics.",

keywords = "Al-Zn-Sn-O thin film transistor (Al-Zn-Sn-O TFT), supercritical fluid (SCF), transparent amorphous oxide semiconductor (TAOS)",

author = "Teng, {Li Feng} and Po-Tsun Liu and Wang, {Wei Ya}",

year = "2013",

month = sep,

doi = "10.1109/LED.2013.2272117",

language = "English",

volume = "34",

pages = "1154--1156",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Electrical performance enhancement of Al-Zn-Sn-O thin film transistor by supercritical fluid treatment

AU - Teng, Li Feng

AU - Liu, Po-Tsun

AU - Wang, Wei Ya

PY - 2013/9

Y1 - 2013/9

N2 - In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics.

AB - In this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics.

KW - Al-Zn-Sn-O thin film transistor (Al-Zn-Sn-O TFT)

KW - supercritical fluid (SCF)

KW - transparent amorphous oxide semiconductor (TAOS)

UR - http://www.scopus.com/inward/record.url?scp=84883184240&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2272117

DO - 10.1109/LED.2013.2272117

M3 - Article

AN - SCOPUS:84883184240

SN - 0741-3106

VL - 34

SP - 1154

EP - 1156

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 6574227

ER -

Electrical performance enhancement of Al-Zn-Sn-O thin film transistor by supercritical fluid treatment

摘要

存取文件

其它文件與鏈接

指紋

引用此