Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

Ram Narayan Chauhan, Nidhi Tiwari*, Han Ping D. Shieh, Po-Tsun Liu

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µFE ∼ 22.30 cm2/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔVth ∼ 1.23 V) than the IZO (µFE ∼ 19.90 cm2/Vs, SS ∼ 0.46 V/decade, ΔVth ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays.

原文English
頁(從 - 到)293-296
頁數4
期刊Materials Letters
214
DOIs
出版狀態Published - 1 3月 2018

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