Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors

Li Feng Teng; Po-Tsun Liu; Chur Shyang Fun; Yi Teh Chou; Fu Hai Li; Chih Hsiang Chang; Han-Ping Shieh

Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors

Li Feng Teng^*, Po-Tsun Liu, Chur Shyang Fun, Yi Teh Chou, Fu Hai Li, Chih Hsiang Chang, Han-Ping Shieh

^*此作品的通信作者

光電工程學系

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.

原文	English
主出版物標題	Society for Information Display - 18th International Display Workshops 2011, IDW'11
頁面	113-115
頁數	3
出版狀態	Published - 1 12月 2011
事件	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan 持續時間: 7 12月 2011 → 9 12月 2011

出版系列

名字	Proceedings of the International Display Workshops
卷	1
ISSN（列印）	1883-2490

Conference

Conference	18th International Display Workshops 2011, IDW 2011
國家/地區	Japan
城市	Nagoya
期間	7/12/11 → 9/12/11

UN SDG

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其它文件與鏈接

Link to publication in Scopus

引用此

Teng, L. F., Liu, P-T., Fun, C. S., Chou, Y. T., Li, F. H., Chang, C. H., & Shieh, H-P. (2011). Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors. 於 Society for Information Display - 18th International Display Workshops 2011, IDW'11 (頁 113-115). (Proceedings of the International Display Workshops; 卷 1).

@inproceedings{4063d3f9457241fda2585785f2b73837,

title = "Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors",

abstract = "We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.",

author = "Teng, {Li Feng} and Po-Tsun Liu and Fun, {Chur Shyang} and Chou, {Yi Teh} and Li, {Fu Hai} and Chang, {Chih Hsiang} and Han-Ping Shieh",

year = "2011",

month = dec,

day = "1",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "113--115",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "null ; Conference date: 07-12-2011 Through 09-12-2011",

}

Teng, LF, Liu, P-T, Fun, CS, Chou, YT, Li, FH, Chang, CH & Shieh, H-P 2011, Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors. 於 Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, 卷 1, 頁 113-115, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 7/12/11.

Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors. / Teng, Li Feng; Liu, Po-Tsun; Fun, Chur Shyang 等.

Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 113-115 (Proceedings of the International Display Workshops; 卷 1).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors

AU - Teng, Li Feng

AU - Liu, Po-Tsun

AU - Fun, Chur Shyang

AU - Chou, Yi Teh

AU - Li, Fu Hai

AU - Chang, Chih Hsiang

AU - Shieh, Han-Ping

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.

AB - We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84870652971&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870652971

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 113

EP - 115

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

Y2 - 7 December 2011 through 9 December 2011

ER -

Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors

摘要

出版系列

Conference

UN SDG

其它文件與鏈接

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引用此