Electrical degradation of n-channel poly-Si TFT under AC stress

C. W. Chen; T. C. Chang; Po-Tsun Liu; H. Y. Lu; T. M. Tsai; C. F. Weng; C. W. Hu; Tseung-Yuen Tseng

doi:10.1149/1.1960173

Electrical degradation of n-channel poly-Si TFT under AC stress

C. W. Chen^*, T. C. Chang, Po-Tsun Liu, H. Y. Lu, T. M. Tsai, C. F. Weng, C. W. Hu, Tseung-Yuen Tseng

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.

原文	English
頁（從 - 到）	H69-H71
頁數	3
期刊	Electrochemical and Solid-State Letters
卷	8
發行號	9
DOIs	https://doi.org/10.1149/1.1960173
出版狀態	Published - 29 9月 2005

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abstract = "The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.",

author = "Chen, {C. W.} and Chang, {T. C.} and Po-Tsun Liu and Lu, {H. Y.} and Tsai, {T. M.} and Weng, {C. F.} and Hu, {C. W.} and Tseung-Yuen Tseng",

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T1 - Electrical degradation of n-channel poly-Si TFT under AC stress

AU - Chen, C. W.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Lu, H. Y.

AU - Tsai, T. M.

AU - Weng, C. F.

AU - Hu, C. W.

AU - Tseng, Tseung-Yuen

PY - 2005/9/29

Y1 - 2005/9/29

N2 - The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.

AB - The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.

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VL - 8

SP - H69-H71

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Electrical degradation of n-channel poly-Si TFT under AC stress

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