Electrical Conductivity Improvement of Point Defects in 4H-SiC

Keyphrases

• Electrical Conductivity 100%
• 4H-SiC 100%
• Conductivity Improvement 100%
• 4H-SiC Substrates 60%
• High Electrical Conductivity 40%
• Interstitial Defects 20%
• Wide Bandgap 20%
• High Melting Temperature 20%
• Bandgap Property 20%
• Atomic Model 20%
• Atom Vacancy Defects 20%

Engineering

• Electrical Conductivity 100%
• High Electrical Conductivity 66%
• Melting Temperature 33%
• Band Gap 33%
• Melting Point 33%

Material Science

• Electrical Conductivity 100%
• Point Defect 100%
• Interstitial Defect 20%
• Vacancy Defect 20%