Electrical Conductivity Improvement of Point Defects in 4H-SiC

Chih Shan Tan*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Owing to its high melting temperature, the 4H-SiC substrate exhibits numerous defects that are difficult to remove, hindering the development of large-scale, high electrical conductivity 4H-SiC substrates. This study constructs and analyzes atomic models of point defects in 4H-SiC, focusing mainly on Si and C atom vacancies and interstitial defects. Point defects in 4H-SiC can increase the electrical conductivity. For example, the Si0 vacancy has been found to enhance the electrical conductivity of a 4H-SiC unit cell by more than 220 times, converting its wide bandgap property to metallic. The research demonstrates that defects can improve 4H-SiC properties, paving the way for defect-selective technology to develop large-scale, high electrical conductivity 4H-SiC substrates.

原文English
頁(從 - 到)6250-6257
頁數8
期刊Crystal Growth and Design
23
發行號9
DOIs
出版狀態Published - 6 9月 2023

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