Electrical conductivity improvement of charged Ga vacancies in wurtzite GaN

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摘要

This investigation explores the complex role of Ga vacancy charged defect in the crystalline structure of wurtzite Gallium Nitride (GaN), highlighting a significant increase in electrical conductivity—contrary to conventional beliefs. Through advanced Density Functional Theory (DFT) calculations, the study reveals that specific configurations of Ga vacancy charged defect contribute to a sixfold increase in electrical conductivity in wurtzite GaN. However, it is crucial to note that N vacancy charged defects negatively impact these electrical properties. This detailed theoretical analysis sheds light on how these vacancy charged defects can positively affect conductivity and provides a novel perspective on charged defects in GaN, paving the way for the optimized design of GaN in the future.

原文English
文章編號108655
期刊Materials Today Communications
39
DOIs
出版狀態Published - 6月 2024

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