摘要
This investigation explores the complex role of Ga vacancy charged defect in the crystalline structure of wurtzite Gallium Nitride (GaN), highlighting a significant increase in electrical conductivity—contrary to conventional beliefs. Through advanced Density Functional Theory (DFT) calculations, the study reveals that specific configurations of Ga vacancy charged defect contribute to a sixfold increase in electrical conductivity in wurtzite GaN. However, it is crucial to note that N vacancy charged defects negatively impact these electrical properties. This detailed theoretical analysis sheds light on how these vacancy charged defects can positively affect conductivity and provides a novel perspective on charged defects in GaN, paving the way for the optimized design of GaN in the future.
原文 | English |
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文章編號 | 108655 |
期刊 | Materials Today Communications |
卷 | 39 |
DOIs | |
出版狀態 | Published - 6月 2024 |