Electrical conduction processes in Lanthana thin films prepared by E-beam evaporation

Yongshik Kim*, Shun Ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

*此作品的通信作者

研究成果: Paper同行評審

摘要

Lanthana (La 2O 3) films were deposited by E-beam evaporation on n-Si (100). Conduction mechanisms for the as-deposited film have been investigated. In order to study the annealing effect of the as-deposited films on the conduction mechanisms, some films were annealed in an ex-situ way at different temperatures with nitrogen or oxygen gas flow for S min. From current-voltage measurement of the as-deposited films, low gate oxide leakage current was observed while some films showed variation in the scale of the currents. It is shown that all the currents of as-deposited films obey the same conduction mechanisms irrelevant of the leakage current scale. From the electric field and temperature dependences of the current of the gate oxide, it is shown that the main conduction mechanism is the space-charge-limited current (SCLC) at low oxide field region and Fowler-Nordheim (F-N) conduction at high oxide field region. It is also shown that conduction mechanisms of the nitrogen annealed films were basically the same as those of the as-deposited films although the magnitude of the conduction current and flat-band voltage (V FB) are different.

原文English
頁面452-463
頁數12
出版狀態Published - 2004
事件Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
持續時間: 3 十月 20048 十月 2004

Conference

ConferenceDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
國家/地區United States
城市Honolulu, HI
期間3/10/048/10/04

指紋

深入研究「Electrical conduction processes in Lanthana thin films prepared by E-beam evaporation」主題。共同形成了獨特的指紋。

引用此