Electrical conduction mechanisms in natively doped ZnO nanowires (II)

We have measured the intrinsic electrical resistivities, ρ(T), of three individual single-crystalline ZnO nanowires (NWs) from 320 down to 1.3K. The NWs were synthesized via carbon thermal chemical vapor deposition and the four-probe Pt contacting electrodes were made by the focused-ion-beam technique. Analysis of the overall temperature behavior of ρ(T) confirms that the charge transport processes in natively doped ZnO NWs are due to a combination of the thermal activation conduction and the nearest-neighbor hopping conduction processes, as proposed and explained in a recent work (Chiu et al 2009 Nanotechnology 20 015203) where the ZnO NWs were grown by a different thermal evaporation method and the four-probe electrodes were made by the electron-beam lithography technique. Taken together, the observations of these two complementary studies firmly establish that the electrical conduction mechanisms in natively doped ZnO NWs are unique and now satisfactorily understood.