Electrical characterization of alloy thin films of VSi2 and V3Si

F. Nava*, O. Bisi, P. Psaras, H. Takai, King-Ning Tu

*此作品的通信作者

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6 引文 斯高帕斯(Scopus)

摘要

In situ resistivity measurement was used to study the crystallization and the electrical conduction processes of V3Si and VSi2 thin films as a function of temperature. The films were deposited by dual-electron-beam coevaporation through metallic masks in a van der Pauw configuration onto oxidized silicon substrates. In the as-deposited state the alloy thin films were amorphous. For the electrical characterization of VSi2, silicon-rich specimens with a V:Si atomic ratio of 1:3 were used. The kinetics of crystallization are well described by an equation of the Johnson-Mehl-Avrami type. Measurements of the electrical resistivity ρ{variant} over a wide temperature range (2-1100 K) on samples preheated at a high temperature exhibit a similar behavior for both the vanadium silicides, i.e. ρ{variant} rises less rapidly with temperature T than the Bloch-Grüneisen theory predicts and seems to approach a saturation value at the higher temperatures. An empirical formula is used to obtain a best fit of the resistivity curves. Polycrystalline V3Si thin film became superconductive at 15 K with a residual resistivity ratio of 10.6.

原文English
頁(從 - 到)167-172
頁數6
期刊Thin Solid Films
140
發行號1
DOIs
出版狀態Published - 16 六月 1986

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