Electrical characterization and materials stability analysis of la 2o3/hfo2 composite oxides on n-in 0.53ga0.47as mos copacitors with different annealing temperatures

Yueh Chin Lin, Hai Dang Trinh, Ting Wei Chuang, Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, Chun Hsiung Lin, Carlos H. Diaz, Hui Chen Chang, Simon M. Jang, Edward Yi Chang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

In this letter, a high-k composite oxide composed of La2O 3 and HfO2 is investigated for n-In0.53Ga 0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O 3 (0.8 nm)/HfO2(0.8 nm) on InGaAs with post deposition annealing at 500 °C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (Dit) of 7.0 × 1011 cm-2eV -1, small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved..

原文English
文章編號6579646
頁(從 - 到)1229-1231
頁數3
期刊IEEE Electron Device Letters
34
發行號10
DOIs
出版狀態Published - 19 8月 2013

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