Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Yan Kui Liang; Jing Wei Lin; Li Chi Peng; Yi Miao Hua; Tsung Te Chou; Chi Chung Kei; Chun Chieh Lu; Huai Ying Huang; Sai Hooi Yeong; Yu Ming Lin; Po Tsun Liu; Edward Yi Chang; Chun Hsiung Lin

doi:10.1109/TED.2022.3232476

Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Yan Kui Liang, Jing Wei Lin, Li Chi Peng, Yi Miao Hua, Tsung Te Chou, Chi Chung Kei, Chun Chieh Lu, Huai Ying Huang, Sai Hooi Yeong, Yu Ming Lin, Po Tsun Liu, Edward Yi Chang, Chun Hsiung Lin

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin (<inline-formula> <tex-math notation="LaTeX">$\approx$</tex-math> </inline-formula>3 nm) amorphous indium–zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of <inline-formula> <tex-math notation="LaTeX">$\approx$</tex-math> </inline-formula>6:4 exhibited a high field-effect channel mobility (<inline-formula> <tex-math notation="LaTeX">$\mu_{\text{FE}}\text{)}$</tex-math> </inline-formula> of 53.6 cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula>/V-s, a threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\textit{V}_{\text{th}}\text{)}$</tex-math> </inline-formula> of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an <inline-formula> <tex-math notation="LaTeX">$I_{\biosc{on}}/I_{\biosc{off}}$</tex-math> </inline-formula> ratio of <inline-formula> <tex-math notation="LaTeX">$>$</tex-math> </inline-formula>10<inline-formula> <tex-math notation="LaTeX">$^{\text{9}}$</tex-math> </inline-formula>, and a contact resistance of 0.18 k<inline-formula> <tex-math notation="LaTeX">$\Omega $</tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">$\mu $</tex-math> </inline-formula>m after 300 <inline-formula> <tex-math notation="LaTeX">${^{\circ}}$</tex-math> </inline-formula>C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability (<inline-formula> <tex-math notation="LaTeX">$\Delta\textit{V}_{\text{th, PBS}}$</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">$<$</tex-math> </inline-formula> 16 mV and <inline-formula> <tex-math notation="LaTeX">$\Delta\textit{V}_{\text{th, NBS}}$</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">$<$</tex-math> </inline-formula> 12 mV) after positive bias stress (PBS) and negative bias stress (NBS) test for 3600 s. To the best of our knowledge, we reported the TFT with thinnest IZO ternary oxide semiconductor (OS) channel exhibiting superior channel mobility and subthreshold characteristics.

原文	English
頁（從 - 到）	1-6
頁數	6
期刊	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2022.3232476
出版狀態	Accepted/In press - 2022

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10.1109/TED.2022.3232476

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Liang, Y. K., Lin, J. W., Peng, L. C., Hua, Y. M., Chou, T. T., Kei, C. C., Lu, C. C., Huang, H. Y., Yeong, S. H., Lin, Y. M., Liu, P. T., Chang, E. Y., & Lin, C. H. (認可的出版社/出版中). Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition. IEEE Transactions on Electron Devices, 1-6. https://doi.org/10.1109/TED.2022.3232476

@article{ad5fb24afe5941b79f37b35d32731080,

title = "Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition",

abstract = "In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin ( $\approx$ 3 nm) amorphous indium–zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of $\approx$ 6:4 exhibited a high field-effect channel mobility ( $\mu_{\text{FE}}\text{)}$ of 53.6 cm $^{\text{2}}$ /V-s, a threshold voltage ( $\textit{V}_{\text{th}}\text{)}$ of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an $I_{\biosc{on}}/I_{\biosc{off}}$ ratio of $>$ 10 $^{\text{9}}$ , and a contact resistance of 0.18 k $\Omega $ - $\mu $ m after 300 ${^{\circ}}$ C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability ( $\Delta\textit{V}_{\text{th, PBS}}$ $<$ 16 mV and $\Delta\textit{V}_{\text{th, NBS}}$ $<$ 12 mV) after positive bias stress (PBS) and negative bias stress (NBS) test for 3600 s. To the best of our knowledge, we reported the TFT with thinnest IZO ternary oxide semiconductor (OS) channel exhibiting superior channel mobility and subthreshold characteristics.",

keywords = "Annealing, Atomic layer deposition (ALD), high mobility, II-VI semiconductor materials, indium–zinc oxide (IZO), InZnO thin-film transistors (TFTs), Iron, Logic gates, oxygen annealing, reliability, TFTs, Thin film transistors, Uninterruptible power systems, Zinc oxide",

author = "Liang, {Yan Kui} and Lin, {Jing Wei} and Peng, {Li Chi} and Hua, {Yi Miao} and Chou, {Tsung Te} and Kei, {Chi Chung} and Lu, {Chun Chieh} and Huang, {Huai Ying} and Yeong, {Sai Hooi} and Lin, {Yu Ming} and Liu, {Po Tsun} and Chang, {Edward Yi} and Lin, {Chun Hsiung}",

note = "Publisher Copyright: IEEE",

year = "2022",

doi = "10.1109/TED.2022.3232476",

language = "English",

pages = "1--6",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

}

TY - JOUR

T1 - Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

AU - Liang, Yan Kui

AU - Lin, Jing Wei

AU - Peng, Li Chi

AU - Hua, Yi Miao

AU - Chou, Tsung Te

AU - Kei, Chi Chung

AU - Lu, Chun Chieh

AU - Huang, Huai Ying

AU - Yeong, Sai Hooi

AU - Lin, Yu Ming

AU - Liu, Po Tsun

AU - Chang, Edward Yi

AU - Lin, Chun Hsiung

N1 - Publisher Copyright: IEEE

PY - 2022

Y1 - 2022

N2 - In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin ( $\approx$ 3 nm) amorphous indium–zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of $\approx$ 6:4 exhibited a high field-effect channel mobility ( $\mu_{\text{FE}}\text{)}$ of 53.6 cm $^{\text{2}}$ /V-s, a threshold voltage ( $\textit{V}_{\text{th}}\text{)}$ of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an $I_{\biosc{on}}/I_{\biosc{off}}$ ratio of $>$ 10 $^{\text{9}}$ , and a contact resistance of 0.18 k $\Omega $ - $\mu $ m after 300 ${^{\circ}}$ C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability ( $\Delta\textit{V}_{\text{th, PBS}}$ $<$ 16 mV and $\Delta\textit{V}_{\text{th, NBS}}$ $<$ 12 mV) after positive bias stress (PBS) and negative bias stress (NBS) test for 3600 s. To the best of our knowledge, we reported the TFT with thinnest IZO ternary oxide semiconductor (OS) channel exhibiting superior channel mobility and subthreshold characteristics.

AB - In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin ( $\approx$ 3 nm) amorphous indium–zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of $\approx$ 6:4 exhibited a high field-effect channel mobility ( $\mu_{\text{FE}}\text{)}$ of 53.6 cm $^{\text{2}}$ /V-s, a threshold voltage ( $\textit{V}_{\text{th}}\text{)}$ of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an $I_{\biosc{on}}/I_{\biosc{off}}$ ratio of $>$ 10 $^{\text{9}}$ , and a contact resistance of 0.18 k $\Omega $ - $\mu $ m after 300 ${^{\circ}}$ C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability ( $\Delta\textit{V}_{\text{th, PBS}}$ $<$ 16 mV and $\Delta\textit{V}_{\text{th, NBS}}$ $<$ 12 mV) after positive bias stress (PBS) and negative bias stress (NBS) test for 3600 s. To the best of our knowledge, we reported the TFT with thinnest IZO ternary oxide semiconductor (OS) channel exhibiting superior channel mobility and subthreshold characteristics.

KW - Annealing

KW - Atomic layer deposition (ALD)

KW - high mobility

KW - II-VI semiconductor materials

KW - indium–zinc oxide (IZO)

KW - InZnO thin-film transistors (TFTs)

KW - Iron

KW - Logic gates

KW - oxygen annealing

KW - reliability

KW - TFTs

KW - Thin film transistors

KW - Uninterruptible power systems

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=85147214363&partnerID=8YFLogxK

U2 - 10.1109/TED.2022.3232476

DO - 10.1109/TED.2022.3232476

M3 - Article

AN - SCOPUS:85147214363

SN - 0018-9383

SP - 1

EP - 6

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

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