Electrical Characteristics of Si0.8Ge0.2p-MOSFET With TMA Pre-Doping and NH3Plasma IL Treatment

Meng Chien Lee, Nien Ju Chung, Hung Ru Lin, Wei Li Lee, Yun Yan Chung, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien*

*此作品的通信作者

研究成果: Article同行評審

摘要

We successfully fabricated p-MOSFETs on Si0.8Ge0.2 substrate using trimethylaluminum (TMA) pre-doping and NH3 plasma as interfacial layer (IL) treatment for HfO2-based gate stacks. X-ray photoelectron spectroscopy (XPS) findings indicated that SiGe interface with TMA pre-doping and NH3 plasma was free from Ge-O bonds and mainly composed of Si-N and Al-O bonds. With this IL treatment, p-MOSFET revealed an improved subthreshold swing of 98 mV/decade and a high ION/IOFF ratio of 6×106. Furthermore, the ID - VD curves of p-MOSFET showed that the driving current was enhanced from 0.5 to 1.8μA/μm at VD = -1 V. Therefore, the proposed scheme is a simple technique to achieve a high-quality interface on a SiGe substrate.

原文English
頁(從 - 到)1776-1780
頁數5
期刊IEEE Transactions on Electron Devices
69
發行號4
DOIs
出版狀態Published - 1 4月 2022

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