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Electrical Characteristics of Magnesium Doped a-IGZO RRAM: Chemical Vapor Deposition using Enhanced Atmospheric Pressure-Plasma
Chien Hung Wu
*
, Song Nian Kuo
, Yi Ming Chen
, Kow Ming Chang
, Yu Yang
,
Albert Chin
*
此作品的通信作者
電子研究所
研究成果
:
Conference contribution
›
同行評審
5
引文 斯高帕斯（Scopus）
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Keyphrases
Chemical Vapor Deposition
100%
Electrical Characteristics
100%
Amorphous InGaZnO (a-IGZO)
100%
Atmospheric Pressure Plasma
100%
Magnesium Doped
100%
RRAM Devices
80%
Insulator Layer
60%
Magnesium
60%
Oxygen Vacancy
40%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
20%
Insulator
20%
MOSFET
20%
Atmospheric Pressure
20%
Leakage Current
20%
Magnetoresistance
20%
Metal-insulator-metal Structure
20%
Resistivity
20%
Phase Change
20%
Transistor Technology
20%
Downscaling
20%
Non-volatile Memory
20%
Data Storage
20%
Thin Oxides
20%
Floating Gate Memory
20%
Ferroelectric Memory
20%
Pressure Plasma
20%
Read Process
20%
Phase Change Random Access Memory (PCRAM)
20%
Magnesium Doping
20%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Resistive
100%
Oxygen Vacancy
100%
Pressure Plasma
100%
Atmospheric Pressure
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Metal-Insulator-Metal
50%
Oxide Layer
50%
Nonvolatile Memory
50%
Electrical Device
50%
Floating Gate
50%
Material Science
Chemical Vapor Deposition
100%
Electrical Property
100%
Gallium
100%
Zinc Oxide
100%
Indium
100%
Magnesium
100%
Oxygen Vacancy
40%
Ferroelectric Material
20%
Electrical Resistivity
20%
Oxide Compound
20%
Metal-Oxide-Semiconductor Field-Effect Transistor
20%
Metal-Insulator-Metal Structure
20%
Plasma-Enhanced Chemical Vapor Deposition
20%