Electrical Characteristics of Large-Scale Integration Silicon MOSFET's at Very High Temperatures, Part III: Modeling and Circuit Behavior

F. S. Shoucair, F. S. Shoucair, Wei Hwang, Prem Jain

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

The effects of high temperature (27°C to 300°C) on electrical characteristics of long n and p channel metal-oxide semiconductor field-effect transistors (MOSFET's) are used to extend the validity of the conventional (room temperature) large and small signal models of these devices. A complementary metal-oxide semiconductor (CMOS) inverter's transfer characteristics and switching speed performance, and the frequency response of a simple resistive load inverter are presented, with temperature as a parameter. Some implications of the models developed, on analog MOS circuit design (for high-temperature, operation), are discussed.

原文English
頁(從 - 到)146-153
頁數8
期刊IEEE Transactions on Components, Hybrids, and Manufacturing Technology
7
發行號1
DOIs
出版狀態Published - 1 1月 1984

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