Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part II: Experiment

F. Shoucair*, Wei Hwang, P. Jain

*此作品的通信作者

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

An experimental investigation of the effects of high temperature (25°C to 300°C) on N and P channel MOS transistors is reported. At the device level, the temperature dependences of the electrical parameters are characterized individually; they include the threshold voltage, the channel mobility, and junction leakage currents. Drain current I-V characteristics are obtained for each of the subthreshold, nonsaturation, and saturation regions of operation, with temperature as a parameter. Zero-Temperature-Coefficient (ZTC) points' properties are found to be in good agreement with the theory.

原文English
頁(從 - 到)487-510
頁數24
期刊Microelectronics Reliability
24
發行號3
DOIs
出版狀態Published - 1 1月 1984

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