Electrical characteristics of flexible organic thin-film transistors under bending conditions

Fang-Chung Chen; Tzung D. Chen

Electrical characteristics of flexible organic thin-film transistors under bending conditions

Fang-Chung Chen^*, Tzung D. Chen

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

The electrical properties of flexible organic thin-film transistors fabricated on stainless steel substrates were measured under different bending conditions. We found that the compressive strain resulted in an increased mobility while the tensile strain leaded to a decreased one. The strains probably influenced the barrier height between the pentacene grains.

原文	English
頁面	2239-2241
頁數	3
出版狀態	Published - 1 12月 2010
事件	17th International Display Workshops, IDW'10 - Fukuoka, 日本持續時間: 1 12月 2010 → 3 12月 2010

Conference

Conference	17th International Display Workshops, IDW'10
國家/地區	日本
城市	Fukuoka
期間	1/12/10 → 3/12/10

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Link to publication in Scopus

引用此

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title = "Electrical characteristics of flexible organic thin-film transistors under bending conditions",

abstract = "The electrical properties of flexible organic thin-film transistors fabricated on stainless steel substrates were measured under different bending conditions. We found that the compressive strain resulted in an increased mobility while the tensile strain leaded to a decreased one. The strains probably influenced the barrier height between the pentacene grains.",

author = "Fang-Chung Chen and Chen, {Tzung D.}",

year = "2010",

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language = "English",

pages = "2239--2241",

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AU - Chen, Fang-Chung

AU - Chen, Tzung D.

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N2 - The electrical properties of flexible organic thin-film transistors fabricated on stainless steel substrates were measured under different bending conditions. We found that the compressive strain resulted in an increased mobility while the tensile strain leaded to a decreased one. The strains probably influenced the barrier height between the pentacene grains.

AB - The electrical properties of flexible organic thin-film transistors fabricated on stainless steel substrates were measured under different bending conditions. We found that the compressive strain resulted in an increased mobility while the tensile strain leaded to a decreased one. The strains probably influenced the barrier height between the pentacene grains.

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M3 - Paper

AN - SCOPUS:79956320044

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T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Electrical characteristics of flexible organic thin-film transistors under bending conditions

摘要

Conference

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