Electrical characteristics of Al2O3/InSb MOSCAPs and the effect of postdeposition annealing temperatures

Hai Dang Trinh, Yueh Chin Lin, Edward Yi Chang, Ching Ting Lee, Shin Yuan Wang, Hong Quan Nguyen, Yu Sheng Chiu, Quang Ho Luc, Hui Chen Chang, Chun-Hsiung Lin, Simon Jang, Carlos H. Diaz

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14 引文 斯高帕斯(Scopus)

摘要

The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature >300 °C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.

原文English
頁(從 - 到)1555-1560
頁數6
期刊IEEE Transactions on Electron Devices
60
發行號5
DOIs
出版狀態Published - 2013

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