Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition

Chun-Hsiung Lin, P. A. Friddle, X. Lu, Haydn Chen*, Young Kim, T. B. Wu

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Pb(Zr0.5Ti0.5)O3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600°C by metalorganic chemical vapor deposition. P-E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C-V behavior of these films was illustrated I-V characteristics of these films were also described.

原文English
頁(從 - 到)2157-2159
頁數3
期刊Journal of Applied Physics
88
發行號4
DOIs
出版狀態Published - 15 8月 2000

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