@inproceedings{14eae8a77abe4cc7911ce0891e82fb45,
title = "Electrical characteristics of 16-nm multi-gate-and-multi-fin field effect transistors and digital circuits",
abstract = "The structure with vertical channel is attractive due to suppression of the short-channel effect, where the shape of silicon fin determines the device performance. In this work, the DC characteristics of single-fin FinFET are simulated, which shows a better immunity against fluctuation induced by random dopant than that of tri-gate and quasi-planar fin shapes. Increasing the number of silicon fins of FinFET can further improve the performance. Examining the fluctuation induced by random dopant in CMOS inverter and SRAM circuits with triple-fin structure shows that the fluctuation of intrinsic gate delay and SNM in triple-fin FinFET are smaller and larger, respectively, than that of others due to higher driving current.",
keywords = "3D density-gradient equations, Co-planar FET, Fin aspect ratio, FinFET, Gate delay, Random-dopant-induced fluctuations, Static noise margin, Tri-gate FET",
author = "Cheng, {Hui Wen} and Yiming Li",
year = "2010",
month = jun,
language = "English",
isbn = "9781439834022",
series = "Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010",
pages = "721--724",
booktitle = "Nanotechnology 2010",
note = "Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 ; Conference date: 21-06-2010 Through 24-06-2010",
}