Electrical characteristic variability in 16-nm multi-gate MOSFET current mirror circuit

Keyphrases

• Electrical Characteristics 100%
• Multiple-Gate MOSFETs (MuGFETs) 100%
• Current Mirror Circuit 100%
• Random Dopant Fluctuation 75%
• Work Function Fluctuation 75%
• P-type 50%
• Fluctuation Function 50%
• Fin Field-effect Transistor (FinFET) 25%
• Metal Gate Work Function 25%
• Drive Current 25%
• Aspect Ratio 25%
• Quasi-planar 25%
• Fin Width 25%
• Oxide Thickness Variation 25%
• Process Variation Effect 25%
• Fin Height 25%
• Multigate Devices 25%
• Circuit Characteristics 25%
• Intrinsic Fluctuations 25%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Current Mirror 100%
• Dopants 75%
• Oxide Thickness 25%
• Metal Gate 25%
• Fin Width 25%
• Intrinsic Parameter 25%
• Fin Height 25%
• Random Fluctuation 25%
• Characteristic Circuit 25%
• Process Variation 25%
• Aspect Ratio 25%