TY - GEN
T1 - Electrical characteristic variability in 16-nm multi-gate MOSFET current mirror circuit
AU - Cheng, Hui Wen
AU - Li, Yiming
PY - 2010
Y1 - 2010
N2 - In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height / the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n- and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n- and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.
AB - In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height / the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n- and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n- and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.
UR - http://www.scopus.com/inward/record.url?scp=79951783423&partnerID=8YFLogxK
U2 - 10.1109/ESCINANO.2010.5701052
DO - 10.1109/ESCINANO.2010.5701052
M3 - Conference contribution
AN - SCOPUS:79951783423
SN - 9781424488544
T3 - 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings
BT - 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings
T2 - 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010
Y2 - 1 December 2010 through 3 December 2010
ER -