@inproceedings{8e9e24e15a984f2a8a04ae562865e9ff,
title = "Electrical characteristic of InGaAs multiple-gate MOSFET devices",
abstract = "In this work, we study the impact of channel fin width (Wfin) and fin height (Hfin) on III-V multiple-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). We numerically simulated the output and transfer characteristics and the short-channel effect (SCE) of 14-nm InGaAs triple-gate MOSFETs by using an experimentally validated simulation. The engineering findings of this study indicate that devices with Wfin = 10 nm and Hfin between 14 and 21 nm possess optimal characteristic owing to a tradeoff between the drain-induced barrier lowing and subthreshld property. The effects of channel resistance, effective width, and quantum confinement resulting from the Hfin-dependent small energy band gap channel film on device characteristic are further estimated and discussed.",
keywords = "fin height (H), fin width (W), III-V, InGaAs, metal-oxide-semiconductor field-effect transistor (MOSFET), multiple-gate, quantum confinement, short-channel effects (SCEs)",
author = "Huang, {Cheng Hao} and Yi-ming Li",
year = "2015",
month = oct,
day = "5",
doi = "10.1109/SISPAD.2015.7292333",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "357--360",
booktitle = "2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015",
address = "United States",
note = "20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 ; Conference date: 09-09-2015 Through 11-09-2015",
}