TY - JOUR
T1 - Electrical characteristic fluctuations in 16 nm bulk-FinFET devices
AU - Li, Yi-Ming
AU - Hwang, Chih Hong
PY - 2007/9
Y1 - 2007/9
N2 - In this paper, we for the first time study the characteristic fluctuations in 16nm bulk FinFETs. The random-dopant-number- and random-dopant-position-induced fluctuations for different characteristics including the on/off state currents, the threshold voltage, the drain-induced barrier lowering (DIBL), and the subthreshold swing (SS) are explored by a three-dimensional (3D) large scale statistical device simulation technique. This study provides us an insight into the problem of fluctuation. Thus, mechanism of immunity against fluctuation in 16nm bulk FinFET then could be examined, compared with the result of planar device.
AB - In this paper, we for the first time study the characteristic fluctuations in 16nm bulk FinFETs. The random-dopant-number- and random-dopant-position-induced fluctuations for different characteristics including the on/off state currents, the threshold voltage, the drain-induced barrier lowering (DIBL), and the subthreshold swing (SS) are explored by a three-dimensional (3D) large scale statistical device simulation technique. This study provides us an insight into the problem of fluctuation. Thus, mechanism of immunity against fluctuation in 16nm bulk FinFET then could be examined, compared with the result of planar device.
KW - Bulk-FinFET
KW - Fluctuation
KW - Modeling and Simulation
KW - Nanoscale transistor
KW - Random dopant
UR - http://www.scopus.com/inward/record.url?scp=34248675792&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2007.04.055
DO - 10.1016/j.mee.2007.04.055
M3 - Article
AN - SCOPUS:34248675792
SN - 0167-9317
VL - 84
SP - 2093
EP - 2096
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 9-10
ER -