Electrical bistable memory device based on a poly(styrene- b -4-vinylpyridine) nanostructured diblock copolymer thin film

This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene- b -4-vinylpyridine) (PS- b -P4VP) diblock copolymer thin film. The Al/PS- b -P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2 × 10⁵, an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 104 s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.