TY - JOUR
T1 - Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy
AU - Yao, Jianke
AU - Xu, Ningsheng
AU - Deng, Shaozhi
AU - Chen, Jun
AU - She, Juncong
AU - Shieh, Han Ping David
AU - Liu, Po-Tsun
AU - Huang, Yi-Pai
PY - 2011/4/1
Y1 - 2011/4/1
N2 - The electrical and photosensitive characteristics of amorphous indiumgalliumzincoxide (a-IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈O are discussed. With the filling of V̈O of ratio from 14 to 8, the electron density of the a-IGZO channel decreases from 7.5 to 3.8(× 1016cm-3); the saturation mobility of the TFT decreases from 3.1 to 1.4 cm2/(V · s); the threshold voltage increases from 7 to 11 V for the TFT with a lower on-current; and the subthreshold slope increases from 2.4 to 4.4 V/dec for the TFT with a higher interface defect density of 4.9 × 10 11cm-2, the worst electrical stability of Δ V th∼10 V, and a hysteresis-voltage decrease from 3.5 to 2 V. The photoreaction properties of a-IGZO TFTs are also sensitive to the oxygen-content-related absorption of the a-IGZO channel. With the lowest content of oxygen in the channel, the TFT has the largest photocurrent gain of 50 μA(Vg = 30 V; Vd = 10 V) and decrease in V th(|Δ Vth|∼ 5 V) at a high light intensity. The light-induced change of TFT characteristics is totally reversible with the time constant for recovery of about 2.5 h.
AB - The electrical and photosensitive characteristics of amorphous indiumgalliumzincoxide (a-IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈O are discussed. With the filling of V̈O of ratio from 14 to 8, the electron density of the a-IGZO channel decreases from 7.5 to 3.8(× 1016cm-3); the saturation mobility of the TFT decreases from 3.1 to 1.4 cm2/(V · s); the threshold voltage increases from 7 to 11 V for the TFT with a lower on-current; and the subthreshold slope increases from 2.4 to 4.4 V/dec for the TFT with a higher interface defect density of 4.9 × 10 11cm-2, the worst electrical stability of Δ V th∼10 V, and a hysteresis-voltage decrease from 3.5 to 2 V. The photoreaction properties of a-IGZO TFTs are also sensitive to the oxygen-content-related absorption of the a-IGZO channel. With the lowest content of oxygen in the channel, the TFT has the largest photocurrent gain of 50 μA(Vg = 30 V; Vd = 10 V) and decrease in V th(|Δ Vth|∼ 5 V) at a high light intensity. The light-induced change of TFT characteristics is totally reversible with the time constant for recovery of about 2.5 h.
KW - Absorption
KW - amorphous indiumgalliumzincoxide (a-IGZO) thin-film transistor (TFT)
KW - electrical and photosensitive characteristics
KW - oxygen vacancies
UR - http://www.scopus.com/inward/record.url?scp=79953104672&partnerID=8YFLogxK
U2 - 10.1109/TED.2011.2105879
DO - 10.1109/TED.2011.2105879
M3 - Article
AN - SCOPUS:79953104672
SN - 0018-9383
VL - 58
SP - 1121
EP - 1126
JO - Ieee Transactions On Electron Devices
JF - Ieee Transactions On Electron Devices
IS - 4
M1 - 5730484
ER -