Keyphrases
(NH4)2S
50%
Accumulation Capacitance
50%
Al2O3 Gate Dielectric
100%
Al2O3 Thin Films
50%
Aluminum Oxide
100%
Ammonium Sulfide
100%
Annealing
50%
As-deposited
50%
Atomic Layer Deposited
100%
Capacitance
50%
Capacitance-voltage
100%
Charge Trapping
50%
Dielectric Substrate
50%
Electrical Characterization
100%
Electrical Properties
50%
Equivalent Thickness
50%
Fermi-level pinning Effect
50%
Frequency Dispersion
100%
GaAs Structure
50%
GaAs Substrate
100%
Gallium Arsenide
100%
Gate Leakage Current
100%
High Temperature
50%
Interface Quality
50%
Interfacial Properties
50%
Material Characterization
100%
Native Oxide
50%
Order of Magnitude
50%
Oxide Capacitance
50%
Passivated
50%
Reduced Frequency
50%
Substrate Interface
50%
Sulfide
50%
Thermal Desorption
50%
Voltage Frequency
50%
Engineering
Atomic Layer
100%
Dielectrics
33%
Fermi Level
33%
Frequency Dispersion
66%
Gaas Substrate
100%
Gallium Arsenide
100%
Gate Dielectric
100%
Related Defect
33%
Substrate Interface
33%
Thin Films
33%
Material Science
Al2O3
100%
Capacitance
100%
Charge Trapping
20%
Desorption
20%
Dielectric Material
100%
Gallium Arsenide
100%
Interface Property
20%
Oxide Compound
40%
Thin Films
20%
Chemical Engineering
Film
100%
Thermal Desorption
100%