Electric field simulation of the TBC-OTFTs with meshed source electrodes

Hsiao-Wen Zan*, Kuang Ming Wang, Kuo Hsi Yen

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

It was found that Fowler-Nordheim tunneling effect is the dominant mechanism for vertical channel organic thin film transistors with ultra short channel. In order to improve the device saturation characteristics and to lower down the leakage current, a new device structure with meshed source electrodes was introduced. By using Silvaco TCAD simulation, obvious fringing field effect was observed when the meshed source structure was used. The fringing field would suppress Fowler-Nordheim tunneling effect and improve the gate control ability. As a result, lower leakage current and better saturation characteristics could be obtained.

原文English
主出版物標題IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面505-508
頁數4
出版狀態Published - 7月 2007
事件International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
持續時間: 3 7月 20076 7月 2007

出版系列

名字IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
國家/地區Taiwan
城市Taipei
期間3/07/076/07/07

指紋

深入研究「Electric field simulation of the TBC-OTFTs with meshed source electrodes」主題。共同形成了獨特的指紋。

引用此