Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Yu Hung Liao, Daewoong Kwon, Suraj Cheema, Nirmaan Shanker, Ava J. Tan, Ming Yen Kao, Li Chen Wang, Chen-Ming Hu, Sayeef Salahuddin

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Measurements on ultrathin body negative-capacitance (NC) field-effect transistors are shown to display subthreshold behaviors that cannot be explained as a classical MOSFET. Subthreshold swing (SS) at low drain bias decreases with increased gate bias for devices measured over multiple gate lengths down to 30 nm. In addition, improvement in the SS relative to control devices shows a nonmonotonic dependence on the gate length. Using a Landau-Khalatnikov ferroelectric (FE) model calibrated with measured Capacitance-Voltage and combining it with TCAD simulations, we show that these anomalous behaviors can be quantitatively explained and interpreted as field-induced permittivity enhancement. The model predicts substantial scaling improvement at the end of the roadmap.

原文English
期刊IEEE Transactions on Electron Devices
DOIs
出版狀態Accepted/In press - 2021

指紋

深入研究「Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET」主題。共同形成了獨特的指紋。

引用此