Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology

Chau Neng Wu*, Ming-Dou Ker, T. L. Yu, S. T. Lin, K. L. Young, K. Y. Chiu

*此作品的通信作者

研究成果: Paper同行評審

摘要

A well-coupled field-oxide device (WCFOD) has been proposed to effectively improve ESD robustness of output buffers in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of the field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. A 0.5-μm high-speed 256 K SRAM product had been fabricated with this WCFOD to practically verify the excellent efficiency for output ESD protection. The HBM ESD failure voltage of this SRAM product has been improved up to above 6.5 KV without using any extra ESD-modification process, whereas the original output buffer just can sustain the HBM ESD stress of 1 KV only.

原文English
頁面40-44
頁數5
DOIs
出版狀態Published - 1 1月 1997
事件Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
持續時間: 3 6月 19975 6月 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
城市Taipei, China
期間3/06/975/06/97

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