摘要
An efficient n-doped electron transport layer composed of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) and dipotassium phthalate (PAK2) has been developed. By temperature-dependent admittance spectroscopy, the incorporation of PAK2 into BPhen is found to increase electron concentration in BPhen layer, resulting in raising the Fermi-level to ̃0.5 eV below its LUMO which further enhances the efficiency of electron injection from Al cathode. When this n-doped layer is adopted in OLED device, the green Alq3 device can achieve a current efficiency of 3.6 cd/A and a power efficiency of 2.1 lm/W at 20 mA/cm 2 and lower drive voltage of 5.3 V.
原文 | English |
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頁(從 - 到) | 2056-2059 |
頁數 | 4 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 39 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2008 |
事件 | 2008 SID International Symposium - Los Angeles, CA, 美國 持續時間: 20 5月 2008 → 21 5月 2008 |