Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

D. U. Li*, Chia-Ming Tsai

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 μm SiGe BiCMOS process could output 9 Vpp differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W.

原文English
頁(從 - 到)126-127
頁數2
期刊Electronics Letters
41
發行號3
DOIs
出版狀態Published - 3 2月 2005

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