Efficiency improvement of near-ultraviolet nitride-based light-emitting-diode prepared on GaN nano-rod arrays by metalorganic chemical vapor deposition

Cheng-Huang Kuo; Yu An Chen; Ji Pu Wu; Li Chuan Chang

doi:10.1109/JQE.2013.2297413

Efficiency improvement of near-ultraviolet nitride-based light-emitting-diode prepared on GaN nano-rod arrays by metalorganic chemical vapor deposition

Cheng-Huang Kuo, Yu An Chen, Ji Pu Wu, Li Chuan Chang

照明與能源光電研究所

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.

原文	English
文章編號	6702457
頁（從 - 到）	129-132
頁數	4
期刊	IEEE Journal of Quantum Electronics
卷	50
發行號	3
DOIs	https://doi.org/10.1109/JQE.2013.2297413
出版狀態	Published - 3月 2014

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10.1109/JQE.2013.2297413

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abstract = "Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.",

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author = "Cheng-Huang Kuo and Chen, {Yu An} and Wu, {Ji Pu} and Chang, {Li Chuan}",

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AU - Chen, Yu An

AU - Wu, Ji Pu

AU - Chang, Li Chuan

PY - 2014/3

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AB - Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.

KW - InGaN/GaN

KW - LED

KW - Nano-rod arrays

KW - near-ultraviolet

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Efficiency improvement of near-ultraviolet nitride-based light-emitting-diode prepared on GaN nano-rod arrays by metalorganic chemical vapor deposition

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