Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.
|頁（從 - 到）||129-132|
|期刊||IEEE Journal of Quantum Electronics|
|出版狀態||Published - 1 3月 2014|